AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
MRF19125R3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
?
Typical 2-Carrier N-CDMA Performance for VDD
= 26 Volts, I
DQ
=
1300 mA, f = 1930 MHz, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes
8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels
Measured over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz.
Distortion Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz
and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power ? 24 Watts Avg.
Power Gain ? 13.6 dB
Efficiency ? 22%
ACPR ? -51 dB
IM3 ? -37.0 dBc
?
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW
Output Power
Features
?
Internally Matched for Ease of Use
?
High Gain, High Efficiency and High Linearity
?
Integrated ESD Protection
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC
= 25
°C
Derate above 25°C
PD
330
1.89
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.53
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF19125
Rev. 8, 10/2008
Freescale Semiconductor
Technical Data
MRF19125R3
1930-1990 MHz, 125 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 465B-03, STYLE 1
NI-880
?
Freescale Semiconductor, Inc., 2008. All rights reserved.
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF21010LSR1
IC MOSFET RF N-CHAN NI-360S
MRF21030LR3
IC MOSFET RF N-CHAN NI-400
MRF21045LR5
IC MOSFET RF N-CHAN NI-400
MRF21085LSR3
IC MOSFET RF N-CHAN NI-780S
MRF281ZR1
IC MOSFET RF N-CHAN NI-200Z
MRF282SR1
IC MOSFET RF N-CHAN NI-200S
MRF372R3
IC MOSFET RF N-CHAN NI-860C3
MRF373ALSR5
MOSFET RF N-CHAN 32V 75W NI-360S
相关代理商/技术参数
MRF19125S
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125SR3
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF1946
功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
MRF1946A
功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
MRF1A(AMMO)
制造商:Bel Fuse 功能描述:FUSE
MRF1K50GNR5
功能描述:WIDEBAND RF POWER LDMOS TRANSIST 制造商:nxp usa inc. 系列:- 包装:剪切带（CT） 零件状态:在售 晶体管类型:LDMOS 频率:1.8MHz ~ 500MHz 增益:23dB 电压 - 测试:50V 额定电流:- 噪声系数:- 功率 - 输出:1500W 电压 - 额定:50V 封装/外壳:OM-1230G-4L 供应商器件封装:OM-1230G-4L 标准包装:1
MRF1K50HR5
功能描述:HIGH POWER RF TRANSISTOR 制造商:nxp usa inc. 系列:- 包装:剪切带（CT） 零件状态:在售 晶体管类型:LDMOS 频率:1.8MHz ~ 500MHz 增益:22.5dB 额定电流:- 噪声系数:- 功率 - 输出:1500W 电压 - 额定:50V 封装/外壳:SOT-979A 供应商器件封装:NI-1230-4H 标准包装:1
MRF1K50H-TF1
功能描述:MRF1K50H 87.5-108 MHZ EVAL BOARD 制造商:nxp usa inc. 系列:- 零件状态:在售 类型:晶体管 频率:87.5MHz ~ 108MHz 配套使用产品/相关产品:MRF1K50H 所含物品:板 标准包装:1